Apart from crystal quality, problems with the interface of SiC with silicon dioxide have hampered the development of SiC-based power MOSFETs and insulated-gate bipolar transistors. Its capacity to withstand high temperatures and maintain structural integrity under Excessive conditions makes it a precious material in numerous high-stress applications. The CoolSiC�?MOSFET body https://x.com/hongyuxin20/status/1817067894804742216