SiC options 10x the breakdown electric powered subject power of silicon, making it feasible to configure bigger voltage (600V to thousands of V) power devices via a thinner drift layer and better impurity concentration. Because the majority of the resistance element of higher-voltage devices is situated from the drift layer https://www.facebook.com/permalink.php?story_fbid=pfbid02t5PjjArqP3gPPD1S5n8JHwaZEfNndEsPy9eGu73RNrHLmB7wxu7qmEiraP76ixvfl&id=61560512640678&__cft__[0]=AZWn3HyvOafh63eJ2nDvKcJyIW1z5KHvCQgJJTHSgYoA0uefOT4ooUmaTFW7mD1RVLYAEow_UW17A03TjYpPTyOcD0jq2eBd92YEP_uMHgx0iNNWDRbu4QGsY6sfsDsvtKQ4jqEr_OjlQfL3O59HZGwX3Gqp12O5AFF5aeMIAXZjuWk_YNpgzhUbQMAdCgzaJ-b9CHGNxErbt1TULb-uzf_M&__tn__=%2CO%2CP-R